Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers
نویسندگان
چکیده
Electron trapping in ferroelectric and non-ferroelectric HfO2-based layers was studied at room temperature by charge injection photodepopulation techniques. The comparison of inferred energy distribution density trapped electrons differently processed samples shows insignificant impact Al- Si-doping on properties suggesting intrinsic nature the observed traps. A to HfZrO4 is provided. volume concentration deep traps, most which are energetically distributed between 2 3.5 eV below HfO2 conduction band, found be range 1019 cm−3.
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ژورنال
عنوان ژورنال: Solid-state Electronics
سال: 2021
ISSN: ['0038-1101', '1879-2405']
DOI: https://doi.org/10.1016/j.sse.2021.108066